TY - JOUR T1 - Disorder induced transitions in resonantly driven Floquet Topological Insulators JF - Physical Review B Y1 - 2017 A1 - Paraj Titum A1 - Netanel H. Lindner A1 - Gil Refael AB -

We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction band. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasi-energy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet Topological Anderson Insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.

VL - 96 U4 - 054207 UR - https://arxiv.org/abs/1702.02956 CP - 5 U5 - 10.1103/PhysRevB.96.054207 ER -