01530nas a2200217 4500008004100000245006000041210006000101260001500161300001100176490000800187520092200195100001501117700001601132700001601148700001101164700001901175700002101194700001901215700001801234856006001252 2017 eng d00aThreshold Dynamics of a Semiconductor Single Atom Maser0 aThreshold Dynamics of a Semiconductor Single Atom Maser c2017/08/31 a0977020 v1193 a
We demonstrate a single atom maser consisting of a semiconductor double quantum dot (DQD) that is embedded in a high-quality-factor microwave cavity. A finite bias drives the DQD out of equilibrium, resulting in sequential single electron tunneling and masing. We develop a dynamic tuning protocol that allows us to controllably increase the time-averaged repumping rate of the DQD at a fixed level detuning, and quantitatively study the transition through the masing threshold. We further examine the crossover from incoherent to coherent emission by measuring the photon statistics across the masing transition. The observed threshold behavior is in agreement with an existing single atom maser theory when small corrections from lead emission are taken into account.
1 aLiu, Y.-Y.1 aStehlik, J.1 aEichler, C.1 aMi, X.1 aHartke, T., R.1 aGullans, Michael1 aTaylor, J., M.1 aPetta, J., R. uhttps://link.aps.org/doi/10.1103/PhysRevLett.119.097702