



01465nas a2200157   4500008004100000245008500041210006900126260001500195300001100210490000700221520098400228100001701212700002501229700001601254856003701270       2017                        eng d00aDisorder induced transitions in resonantly driven Floquet Topological Insulators0 aDisorder induced transitions in resonantly driven Floquet Topolo  c2017/08/16  a0542070 v963 a<p><span style="font-family: &quot;Lucida Grande&quot;, helvetica, arial, verdana, sans-serif; font-size: 14.4px;">We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction band. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasi-energy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet Topological Anderson Insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.</span></p>1 aTitum, Paraj1 aLindner, Netanel, H.1 aRefael, Gil  uhttps://arxiv.org/abs/1702.02956