01580nas a2200181 4500008004100000245005200041210005200093260001500145300001100160490000700171520107600178100002301254700002101277700001901298700002001317700002401337856003701361 2017 eng d00aValley Blockade in a Silicon Double Quantum Dot0 aValley Blockade in a Silicon Double Quantum Dot c2017/11/13 a2053020 v963 a
Electrical transport in double quantum dots (DQDs) illuminates many interesting features of the dots' carrier states. Recent advances in silicon quantum information technologies have renewed interest in the valley states of electrons confined in silicon. Here we show measurements of DC transport through a mesa-etched silicon double quantum dot. Comparing bias triangles (i.e., regions of allowed current in DQDs) at positive and negative bias voltages we find a systematic asymmetry in the size of the bias triangles at the two bias polarities. Asymmetries of this nature are associated with blocking of tunneling events due to the occupation of a metastable state. Several features of our data lead us to conclude that the states involved are not simple spin states. Rather, we develop a model based on selective filling of valley states in the DQD that is consistent with all of the qualitative features of our data.
1 aPerron, Justin, K.1 aGullans, Michael1 aTaylor, J., M.1 aStewart, M., D.1 aZimmerman, Neil, M. uhttps://arxiv.org/abs/1607.06107